Photo-Electron Multiplier on the Basis of Multilayered Semiconductor Structure

In the paper, a new physical principle for designing of a new optoelectronic device and its theoretical description are presented. The basic idea of the device consists in providing inside a multilayered semiconductor structure such conditions for photoelectrons that enable sequential avalanche multiplication of electrons and holes inside two depletion slabs created around p-n junctions of a reverse biased pn-i-pn structure [1]. The mathematical model and computer simulation results are presented for various versions and regimes of Semiconductor Photo Electron Multiplier (SPEM) for different semiconductor materials. Besides SPEM performance evaluation and comparison with those of conventional devices are presented.